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Transistors
2SD2216J
Silicon NPN epitaxial planar type
1.60+0.05 -0.03 1.000.05 3
0.800.05
For general amplification Complementary to 2SB1462J Features
* High forward current transfer ratio hFE * Low collector-emitter saturation voltage VCE(sat) * SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
Unit: mm
0.12+0.03 -0.01
1.600.05
0.85+0.05 -0.03
1 0.270.02
2
(0.50)(0.50)
0 to 0.02
(0.80)
5
Absolute Maximum Ratings Ta = 25C
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg 60 50 7 100 200 125 125 -55 to +150 V V V mA mA mW C C
0.10 max.
Parameter
Symbol
Rating
Unit
0.70+0.05 -0.03
1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package
Marking Symbol: Y
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO ICEO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA VCE = 2 V, IC = 100 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = -2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 180 90 0.1 150 3.5 0.3 V MHz pF Min 60 50 7 0.1 100 390 Typ Max Unit V V V A A
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
5
(0.375)
Publication date: January 2003
SJC00249CED
1
2SD2216J
PC Ta
200
90
IC VCE
Ta = 25C 1 200 VCE = 10 V Ta = 25C 1 000
IB VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
160
75
60
IB = 160 A 140 A 120 A 100 A
Base current IB (A)
800
120
45
600
80
30
80 A 60 A 40 A 20 A
400
40
15
200
0
0
0
40
80
120
160
0
2
4
6
8
10
12
0
0
0.2
0.4
0.6
0.8
1.0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
IC VBE
120 VCE = 10 V 25C 100
IC I B
VCE = 10 V Ta = 25C 100
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10 IC / IB = 10
120
Collector current IC (mA)
Collector current IC (mA)
Ta = 75C 80
-25C
1
80
60
60
0.1
Ta = 75C 25C -25C
40
40
0.01
20
20
0
0
0 0.2 0.4 0.6 0.8 1.0 1.2
0
80
160
240
320
400
480
0.001
1
10
100
1 000
Base-emitter voltage VBE (V)
Base current IB (A)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
480 VCE = 10 V
6
Cob VCB
f = 1 MHz IE = 0 Ta = 25C
Forward current transfer ratio hFE
400 Ta = 75C 320 25C 240 -25C
5
4
3
160
2
80
1
0
0
1
10
100
1 000
1
10
100
Collector current IC (mA)
Collector-base voltage VCB (V)
2
SJC00249CED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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